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| Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A 5.00.1 Unit: mm q q 2.50.2 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 13.00.2 4.20.2 s Features 10.00.2 1.0 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 -55 to +150 Unit V 2SD2138 2SD2138A 2SD2138 C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 Collector to base voltage Collector to C1.0 emitter voltage 2SD2138A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A 2.50.2 123 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection W C C E B C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2138 2SD2138A 2SD2138 2SD2138A 2SD2138 2SD2138A (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton toff * Conditions VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = -8mA, VCC = 50V min typ max 100 100 100 100 100 Unit A A A V 60 80 1000 2000 10000 2.8 2.5 20 0.4 4 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time *h FE2 V V MHz s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC -- Ta 20 6 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25C 5 2SD2138, 2SD2138A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 25C 100C 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 15 (1) IB=2mA 4 10 3 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 2 0.2mA 5 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) IC -- VBE 6 VCE=4V 5 105 hFE -- IC Collector output capacitance Cob (pF) VCE=4V 1000 Cob -- VCB IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 25C Collector current IC (A) TC=100C 4 -25C TC=100C 104 300 25C 100 3 30 -25C 103 2 10 1 3 0 0 1 2 3 4 102 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C 10000 Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 10 ICP 3 1 0.3 10ms 0.1 0.03 0.01 1 3 10 30 IC DC t=1ms Thermal resistance Rth(t) (C/W) Collector current IC (A) 1000 100 (1) (2) 10 2SD2138A 2SD2138 1 100 300 1000 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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